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4 edition of Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II found in the catalog.

Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II

a special international conference of invited speakers : 14-15 March 1988, Newport Beach, California

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  • 20 Currently reading

Published by SPIE in Bellingham, Wash., USA .
Written in English

    Subjects:
  • Hot carriers -- Congresses.,
  • Microstructure -- Congresses.,
  • Semiconductors -- Effect of radiation on -- Congresses.,
  • Laser spectroscopy -- Congresses.,
  • Picosecond pulses -- Congresses.

  • Edition Notes

    Includes bibliographies and index.

    StatementRobert R. Alfano, chair/editor ; sponsored by Optical Society of America, SPIE--the International Society for Optical Engineering ; cooperating organization, the Metallurgical Society.
    GenreCongresses.
    SeriesProceedings of SPIE--the International Society for Optical Engineering ;, v. 942
    ContributionsAlfano, Robert R., 1941-, Optical Society of America., Society of Photo-optical Instrumentation Engineers., Metallurgical Society (U.S.)
    Classifications
    LC ClassificationsQC611.6.H67 U48 1988
    The Physical Object
    Paginationviii, 282 p. :
    Number of Pages282
    ID Numbers
    Open LibraryOL2064540M
    ISBN 100892529776
    LC Control Number88060783

    With these sources ultrafast phenomena in physical, chemical and biological systems and in electronic de­ vi(:es are now studied extensively. Ultrafast technology is becoming one of the basic and common tools presently entering a wide variety of scientific fields not only for basic re­ search but also for promoting new applications in various. Confining ourselves to the study of high carrier concentrations and subpicosecond laser excitation of bulk GaAs and GaAlAs-GaAs single quantum well structures, we find that rather long optical phonon lifetimes are primarily responsible for the experimental observation of reduced carrier cooling rates.

      Pump-probe spectroscopy is a common method in the study of ultrafast relaxation processes. In the study of the relaxation of hot electrons in semiconductors, there are two possible approaches using this method, each of whici yields different data about the relaxation processes. The first approach probes the relaxation of a population of hot electrons, which has previously been created by Author: Ian A. Walmsley, Frank W. Wise, Chung L. Tang.   Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume 1 discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time Edition: 1.

      KEYWORDS: Prisms, Continuous wave operation, Femtosecond phenomena, Mode locking, Crystals, Nd:YAG lasers, Chromium, Laser crystals, Pulsed laser operation, Absorption Read Abstract + Cr 4+ doped in forsterite and YAG form broadly . The samples were ZnSe bulk crystals with () or () surfaces and thicknesses of about 2 mm. They were excited in backscattering geometry corresponding to ~(x -z for the probe pulse and Z(JJ -z for the pump pulse, so in accordance with the selection rules [8] only the probe pulse generated Stokes signal from the LO phonons.


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Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II Download PDF EPUB FB2

Adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86ACited by: 8. Get this from a library. Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II: a special international conference of invited speakers: MarchNewport Beach, California.

[Robert R Alfano; Optical Society of America.; Society of Photo-optical Instrumentation Engineers.; Metallurgical Society (U.S.);]. Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II. Bellingham, Wash., USA: SPIE, © (DLC) (OCoLC) Material Type: Conference publication, Document, Internet resource: Document Type: Internet Resource, Computer File: All Authors / Contributors: Robert R Alfano; Optical Society of America.

Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume II discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors.

It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. Ultrafast laser probe phenomena in bulk and microstructure semiconductors III.

Bellingham, Wash., USA: SPIE, © (OCoLC) Material Type: Conference publication, Internet resource: Document Type: Book, Internet Resource: All Authors / Contributors: Robert R Alfano; Society of Photo-optical Instrumentation Engineers.; Society of.

Get this from a library. Ultrafast lasers probe phenomena in bulk and microstructure semiconductors: March,Bay Point, Florida. [Robert R Alfano; Society of Photo-optical Instrumentation Engineers.; Metallurgical Society (U.S.);]. Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume II discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors.

It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time Edition: 1.

CONFERENCE PROCEEDINGS Papers Presentations Journals. Advanced Photonics Journal of Applied Remote SensingAuthor: Paolo Lugli, Stephen M. Goodnick. Ultrashort Laser Pulse Phenomena, Second Edition serves as an introduction to the phenomena of ultra short laser pulses and describes how this technology can be used to examine problems in areas such as electromagnetism, optics, and quantum mechanics.

Ultrashort Laser Pulse Phenomena combines theoretical backgrounds and experimental techniques. Abstract Citations References Graphics Metrics Export Citation NASA/ADS. Ultrafast Electronic And Vibrational Effects In Amorphous Multilayers Grahn, H. T.; Ultrafast laser probe phenomena in bulk and microstructure semiconductors II.

Pub Date: August DOI: / Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume 1 discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale.

Superlattices and Microstructures, Vol. 6, No. 3, ULTRAFAST STUDIES OF CARRIER RELAXATION in SEMICONDUCTORS AND THEIR MICROSTRUCTURES Jagdeep Shah AT&T Bell Laboratories Holmdel, N.U. (Received 19 September by J. Dow) Recent advances in lasers have made it possible to investigate fundamental properties of matter on Cited by:   Continuous-wave all-solid-state nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator.

Opt Lett Cited by: R. Alfano (ed.): Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II. SPIE Proc. (SPIE, Bellingham, WA ) Google Scholar Author: Jagdeep Shah.

Ultrafast Recombination And Photoluminescence Spectra Of Semiconductor Microcrystallites Proceedings of SPIE (August 22 ) Subpicosecond scale change in transmission spectrum of vacuum deposited thin Cited by: 1.

Steady state hot luminescence measurements can be used to determine hot carrier distributions and relaxation rates for extremely fast processes with low injected carrier densities.

Luminescence gives a direct measure of the distribution of hot carriers in a semiconductor. We discuss experiments which probe the distribution of electrons high in the conduction by: 1.

The transport of highly excited carriers is governed by their energy loss to phonons. There is a special interest in a thorough understanding of this phenomenon in semiconductors, as it can be of help in determining the characteristics of ultrasmall, high field devices.

There is a special interest in a thorough understanding of this phenomenon in semiconductors, as it can be of help in determining the characteristics of ultrasmall, high field devices. Abstract Citations References Co-Reads Ultrafast laser probe phenomena in bulk and microstructure semiconductors II.

Pub Date: August DOI:   The photoluminescence spectra of CdSxSe1_x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms can be identified. The dynamic behavior can be qualitatively explained by the competition between (A) tunneling-mediated recombination of deeply trapped charges and (B) direct Cited by: 1.

S.A. Lyon, C.L. Petersen, “Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors”, II Proc. SPIE(). CrossRef Google Scholar [6]Author: F. Calle, C. López, F. Meseguer, L. Viña, J. Calleja, C. Tejedor. This subject is currently one of the most exciting areas of research in condensed-matter physics.

Direct investigation of fundamental dynamical processes in semiconductors, exploiting the remarkable recent development of pulses with pulse widths less than 5fs, has led to new insights into fundamental physics and ultra-high-speed electronic and opto-electronic devices.

Light scattering and other secondary emission studies of dynamic processes in semiconductors O. Othonos, H.M. van Driel: in SPIE Proc. Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, ed.

by R. Alfano In SPIE Proc. Ultrafast Laser Phenomena in Bulk and Microstructure Semiconductors II, ed. by R.

Alfano Cited by: 8.In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed.

Then, the scattering to the satellite L and X valleys is Cited by: 2.